Datasheet4U Logo Datasheet4U.com

TIM6472-12UL - MICROWAVE POWER GaAs FET

Features

  • ･BROAD BAND.

📥 Download Datasheet

Datasheet preview – TIM6472-12UL

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 41.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM6472-12UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 2.6A f = 6.4 to 7.2GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 30.
Published: |