TJ100F04M3L Datasheet MOSFETs

Manufacturer: Toshiba

Datasheet Details

TJ100F04M3L MOSFETs Silicon P-Channel MOS (U-MOS) TJ100F04M3L 1.

Applications • • • • Automotive Relay Drivers DC-DC Converters Motor Drivers 2.

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ. ) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220SM(W) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanc.