Datasheet4U Logo Datasheet4U.com

TK25E06K3 - Silicon N-Channel MOSFET

Datasheet Summary

Features

  • (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ. ) High forward transfer admittance: |Yfs| = 50 S (typ. ) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain curr.

📥 Download Datasheet

Datasheet preview – TK25E06K3

Datasheet Details

Part number TK25E06K3
Manufacturer Toshiba Semiconductor
File Size 240.26 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK25E06K3 Datasheet
Additional preview pages of the TK25E06K3 datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
TK25E06K3 MOSFETs Silicon N-channel MOS (U-MOS) TK25E06K3 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 14 mΩ (typ.) High forward transfer admittance: |Yfs| = 50 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 4.
Published: |