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TK40A10K3
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TK40A10K3
Switching Regulator Application
• • • • Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 80 S Low leakage current: IDSS = 10 μA (max) (VDS = 100 V) Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 100 ±20 40 160 40 137 40 3.
TK40A10K3 Datasheet
