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TK4Q60DA - Silicon N-Channel MOSFET

Features

  • (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ. ) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ. ) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4Q60DA New PW-Mold2 1: Gate 2: Drain (heatsink) 3: Source 1 2012-10-16 Rev.2.0 TK4Q60DA 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit D.

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MOSFETs Silicon N-Channel MOS (π-MOS) TK4Q60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (4) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK4Q60DA New PW-Mold2 1: Gate 2: Drain (heatsink) 3: Source 1 2012-10-16 Rev.2.0 TK4Q60DA 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 Drain current (DC) (Note 1) ID 3.
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