Part number:
TK8P60W
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
300.13 KB
Description:
Silicon n-channel mosfet.
* (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.4 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heat Sink) 3: Source DPAK 4. Absolute
TK8P60W
Toshiba ↗ Semiconductor
300.13 KB
Silicon n-channel mosfet.
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