The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC6113
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
TPC6113
Lithium Ion Battery Applications Power Management Switch Applications
• • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.) ( VGS = −4.5V) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −0.2 mA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating −20 −20 ±12 −5 −20 2.2 0.7 1.6 −2.
TPC6113 Datasheet
