The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPC6110
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
www.DataSheet4U.com
TPC6110
Power Management Switch Applications
Unit: mm • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.1mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −30 −25/+20 −4.5 −18 2.2 0.7 3.4 −2.3 0.
TPC6110 Datasheet
