Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
..
Power Management Switch Applications
Unit: mm
- -
- - Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 30 V) Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
-...