Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ)
Lithium Ion Battery Applications Power Management Switch Applications
- -
- - Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 38 mΩ (typ.) ( VGS =
- 4.5V) Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 20 V) Enhancement mode: Vth =
- 0.5 to
- 1.2 V (VDS =
- 10 V, ID =
- 0.2 mA) Unit:...