Click to expand full text
TPC8016-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8016-H
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
• • • • • • • Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R DS (ON) = 3.7 mO (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 ±20 15 60 1.
TPC8016-H Datasheet
