TPC8013-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
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- Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: RDS (ON) = 5.4 mΩ (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k W) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b)
.. Single pulse avalanche energy
Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR
Rating 30 30 ±20 15 60 1.9
Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-6J1B
Drain power dissipation
Weight: 0.080 g...
