TPC8016-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
- -
- -
- -
- Small footprint due to small and thin package High speed switching Small gate charge: Qg = 48 nc (typ.) Low drain-source ON resistance: R DS (ON) = 3.7 m O (typ.) High forward transfer admittance: |Yfs| = 25 S (typ.) Low leakage current: IDSS = 10 µA (max) (V DS = 30 V) Enhancement-mode: V th = 1.1 to 2.3 V (V DS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ ) Gate-source voltage Drain current DC (Note 1) Symbol V DSS V DGR V GSS ID IDP PD Rating 30 30 ±20 15 60 1.9 W Unit V V V A
JEDEC JEITA TOSHIBA
? ? 2-6J1B
Pulsed (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy .. (Note 3) Avalanche current Repetitive...
