TPC8017-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
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- Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 n C (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| =38 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 m A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 2a) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 30 30 ±20 15 60 1.9 Unit V V V A
JEDEC JEITA TOSHIBA
― ― 2-6J1B
Pulsed (Note 1) (t = 10 s) (Note 2a)
Drain power dissipation
Weight: 0.080 g (typ.)
Drain...
