TPC8012-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
Switching Regulator Application DC-DC Converters
Unit: mm
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Low drain-source ON resistance: RDS (ON) = 0.28 Ω (typ.) High forward transfer admittance: |Yfs| = 1.35 S (typ.) Low leakage current: IDSS = 100 µA (max) (VDS = 200 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k W) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy .. (Note 2a) (Note 4) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 200 200 ±30 1.8 7.2 1.9 Unit V V V A
Drain power dissipation
JEDEC JEITA
TO-92 ― 2-6J1B
TOSHIBA
Weight: 0.80 g (typ.)
2.05 1.8 0.19 150 -55 to 150 m J A m J...
