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TPC8017-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
TPC8017-H
High Speed and High Efficiency DC-DC Converters Notebook PC Applications Portable Equipment Applications
• • • • • • • Small footprint due to small and thin package High speed switching Small gate charge: Qg = 25 nC (typ.) Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.) High forward transfer admittance: |Yfs| =38 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.1 to 2.
TPC8017-H Datasheet
