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TPC8133 - Silicon P-Channel MOSFET

Features

  • (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ. ) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit TPC8133 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage.

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS (U-MOS) TPC8133 1. Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2. Features (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit TPC8133 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain SOP-8 4.
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