Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π- MOSVI)
Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
Small footprint due to small and thin package Low drain- source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current : IDSS =
- 10 µA (max) (VDS =
- 30 V) Enhancement- mode : Vth =
- 0.8~
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR...