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TPC8107
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPC8107
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
· · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.
TPC8107 Datasheet
