Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
- -
- -
- Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 30 V) Enhancement-mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b)...