Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U- MOSII)
TPC8106- H
High Speed and High Efficiency DC- DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Small footprint due to small and thin package High speed switching Small gate charge Low drain- source ON resistance : Qg = 52 nC (typ.) : RDS (ON) = 14 mΩ (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 16.6 S (typ.) Low leakage current : IDSS =
- 10 µA (max) (VDS =
- 30 V) Enhancement- mode : Vth =
- 0.8~
- 2.0 V (VDS =- 10 V, ID =
- 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source...