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TPC8106-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8106−H
High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Small footprint due to small and thin package High speed switching Small gate charge Low drain−source ON resistance : Qg = 52 nC (typ.) : RDS (ON) = 14 mΩ (typ.) Unit: mm
High forward transfer admittance : |Yfs| = 16.6 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.
TPC8106-H Datasheet
