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TPC8103
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPC8103
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Unit: mm
l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance: |Yfs| = 20 S (typ.) l Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) l Enhancement-mode: Vth = −0.8~−2.
TPC8103 Datasheet
