Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance: |Yfs| = 20 S (typ.) l Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 30 V) l Enhancement-mode: Vth =
- 0.8~- 2.0 V (VDS =
- 10 V, ID =
- 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1) Pulse (Note 1)
Drain power dissipation
(t = 10 s) (Note...