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TPC8105-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8105−H
High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
l Small footprint due to small and thin package l High speed switching l Small gate charge : Qg = 32 nC (typ.) l Low drain−source ON resistance : RDS (ON) = 20 mΩ (typ.) l High forward transfer admittance : |Yfs| = 12 S (typ.) l Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) l Enhancement−mode : Vth = −0.8~−2.
TPC8105-H Datasheet
