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TPC8209 - Field Effect Transistor

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TPC8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II) TPC8209 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications l l l l l Small footprint due to small and thin package Low drain−source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement−mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 30 30 ±20 5 20 1.5 W PD(2) 1.
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