Datasheet4U Logo Datasheet4U.com

TPC8221-H - Silicon N-Channel MOSFET

Features

  • (1) Small, thin package (2) High-speed switching (3) Small gate change: QSW = 3.5 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ. ) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8221-H SOP-8 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain 1 2011-05-10 Rev.2.0 TPC8221-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Charact.

📥 Download Datasheet

Datasheet preview – TPC8221-H

📁 Similar Datasheet

  • TPC8223-H - Silicon N-Channel MOSFET (Toshiba)
  • TPC8224-H - Silicon N-Channel MOSFET (Toshiba)
  • TPC8227-H - Silicon N-Channel MOSFET (Toshiba)
  • TPC8228-H - Silicon N-Channel MOSFET (Toshiba)
  • TPC8229-H - Silicon N-Channel MOSFET (Toshiba)
  • TPC8229-H - N-Channel 80V MOSFET (VBsemi)
  • TPC8204 - Dual N-Channel 20V MOSFET (VBsemi)
  • TPC8207 - Dual N-Channel 20V MOSFET (VBsemi)
  • TPC8211 - N-Channel MOSFET (Toshiba)
  • TPC8.2A - Transient Voltage Suppressors (Vishay)
Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon N-Channel MOS (U-MOS-H) TPC8221-H 1. Applications • High-Efficiency DC-DC Converters • Notebook PCs • Mobile Handsets 2. Features (1) Small, thin package (2) High-speed switching (3) Small gate change: QSW = 3.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 22 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPC8221-H SOP-8 1, 3: Source 2, 4: Gate 5, 6, 7, 8: Drain 1 2011-05-10 Rev.2.0 TPC8221-H 4.
Published: |