Click to expand full text
TPCA8010-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
TPCA8010-H
High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications
0.5±0.1
Unit: mm
1.27 0.4±0.1
8
5
0.05 M A
6.0±0.3 5.0±0.2
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 3.7 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 0.38Ω (typ.) • High forward transfer admittance: |Yfs| = 3.9S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
0.95±0.05
0.15±0.05
1
4
5.0±0.2
0.595 A
0.166±0.05
0.05 S
S
1
4
1.1±0.
TPCA8010-H Datasheet
