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TPCA8014-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8014-H
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1 1.27 0.4±0.1
8
5
Unit: mm
0.05 M A
6.0±0.3 5.0±0.2
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: Qsw = 7.4 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 7.1 mΩ (typ.) • High forward transfer admittance: |Yfs| = 47 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 40 V) • Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
0.95±0.05
1
4
5.0±0.2
0.595
A 0.166±0.05
S
0.05 S
1
4 1.1±0.2
0.6±0.1 3.5±0.2
Absolute Maximum Ratings (Ta = 25°C)
4.25±0.