Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5±0.1 1.27 0.4±0.1
Unit: mm
0.05 M A
6.0±0.3 5.0±0.2
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: Qsw = 7.4 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 7.1 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 47 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 40 V)
- Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.15±0.05
0.95±0.05
5.0±0.2
A 0.166±0.05
0.05 S
4...