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TPCF8103 - MOSFET

Key Features

  • . Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. . Unintended Usage of.

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www.DataSheet4U.com TPCF8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Portable Equipment Applications • • • • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) High forward transfer admittance: |Yfs| = 4.7S (typ.) Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200μA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 ±8 -2.7 -10.8 2.5 0.7 1.2 -1.35 0.