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TPCP8302 - MOSFET

Key Features

  • 100 1000 Pulse width tw (s) Safe operating area.
  • 100 Single-device value at dual operation (Note 3b) (A) ID max (Pulse).
  • 10 1 ms.
  • 10 ms.
  • Drain current ID.
  • 1.
  • Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature.
  • 1.
  • 10.
  • 0.1.
  • 0.1 VDSS max.
  • 100 Drain.
  • source voltage VDS (V) 6 2008-12-21 TPCP8302 www. DataSheet4U. com.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPCP8302 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS Ⅳ) TPCP8302 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS(ON) = 25 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.4 to −1.0 V (VDS = −6 V, ID = −1 mA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.