TPCP8401
Key Features
- Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin package Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.) Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.)
- Low leakage current : P Channel IDSS = -10 µA (VDS = -12 V) Enhancement-mode : P Channel Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 µA)
