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TPCP8401 - MOSFET

Key Features

  • 0.5 10.
  • 0.1 0.
  • 80.
  • 40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (°C) PD.
  • Ta 2.5.
  • 20 Dynamic input/output characteristics.
  • 10 Common source ID =.
  • 5.5 A.
  • 16 Ta = 25°C Pulse test.
  • 2.5 V.
  • 12.
  • 6 VDD =.
  • 10 V VDD =.
  • 10 V.
  • 8.
  • 5.
  • 4.
  • 2.5 V 0 0 0 40.
  • 2.
  • 5 V.
  • 4 VGS (W) (V) (1) t = 5 s 2 glass-epoxy board(.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS Ⅲ / π -MOS Ⅵ) www.DataSheet4U.com TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications • • • • • Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main switch and N Channel MOS FET for drive Small footprint due to small and thin package Low drain-source ON resistance : P Channel RDS (ON) = 31 mΩ (typ.) Low drain-source ON resistance High forward transfer admittance : P Channel |Yfs| = 13 S (typ.) • • Low leakage current : P Channel IDSS = −10 µA (VDS = −12 V) Enhancement−mode : P Channel Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) 1．Source(Nch） 5．Gate(Pch) S Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 B A 0.65 2.9±0.1 0.05 M B 0.8±0.05 0.025 S 0.17±0.