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TPCP8403 - Field Effect Transistor

Features

  • 2 0 (W) (V) VDS -30 PD Drain power dissipation Drain-source voltage (2) 1.0 (3) 0.5 (4) 0 0 40 80 120 160 200 0 Ambient temperature Ta (℃).

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Full PDF Text Transcription

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TPCP8403 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) TPCP8403 Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • • • • • Lead(Pb)-Free Low drain-source ON resistance : P Channel RDS (ON) = 55 mΩ (typ.) N Channel RDS (ON) = 31 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 8.6 S (typ.) Low leakage current : P Channel IDSS = −10 μA (VDS = −40 V) N Channel IDSS = 10 μA (VDS = 40 V) Enhancement mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit: mm 0.33±0.05 0.05 M A 8 5 2.4±0.1 0.475 1 4 0.65 2.9±0.1 B A 0.05 M B 0.8±0.05 S 0.025 S 0.17±0.02 0.28 +0.1 -0.11 +0.13 1.12 -0.
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