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TPCP8501
TOSHIBA Transistor Silicon NPN Epitaxial Type
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TPCP8501
Switching Applications DC-DC Converter Applications
• • • High DC current gain : hFE = 100 to 300 (IC = 0.3 A)
2.4±0.1
Unit: mm
0.33±0.05 0.05 M A
8 5
High-speed switching : tf = 100 ns (typ.)
0.475
1 4
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (t = 10s) Junction temperature Storage temperature range t = 10s DC DC (Note 1) Symbol VCBO VCEX VCEO VEBO IC ICP IB Pc (Note 2) Tj Tstg Rating 180 150 100 7 2.0 4.0 0.2 3.3 1.3 150 −55 to 150 Unit V V V A A W °C °C
S
B A
0.65 2.9±0.1
0.05 M B
0.8±0.05 0.025
S
0.17±0.02
0.28 +0.1 -0.11
1.12 -0.12 1.12 -0.12 0.28 +0.1 -0.11
+0.
TPCP8501 Datasheet
