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TOSHIBA Transistor Silicon PNP Epitaxial Type
TPCP8602
TPCP8602
High-Speed Switching Applications DC-DC Converter Applications Strobe Flash Applications
0.33±0.05
0.05 M A
8
5
Unit: mm
2.4±0.1 2.8±0.1
• High DC current gain: hFE = 200 to 500 (IC = −0.3 A) • Low collector-emitter saturation: VCE (sat) = −0.2 V (max) • High-speed switching: tf = 90 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
0.475
1
4
0.65
2.9±0.1
S
0.025 S 0.17±0.02
B
0.05 M B
A
0.8±0.05
0.28
+0.1 -0.11
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−7
V
DC (Note 1)
IC
Collector current
Pulse (Note 1 )
ICP
−2.5 A
−4.0
Base current
IB
−0.
TPCP8602 Datasheet
