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TPCP8603
TOSHIBA Transistor Silicon PNP Epitaxial Type
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TPCP8603
High-Speed Switching Applications DC/DC Converters Strobe Applications
• • • High DC current gain: hFE = 120～300 (IC = −0.1 A) Low collector-emitter saturation voltage: VCE (sat) = −0.2 V (max) High-speed switching: tf = 120 ns (typ.)
0.475
1 4
Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.65 2.9±0.1
B A
0.05 M B
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-vase voltage Collector-emitter voltage Collector-emitter voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range t = 10 s DC DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB PC (Note 2) Tj Tstg Rating −120 −120 −7 −1.0 −2.0 0.1 3.00 1.25 150 −55~150 Unit V V V A A A W W °C °C
S
0.
TPCP8603 Datasheet
