Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
- -
- -
- Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 20 V) Enhancement mode: Vth =
- 0.45~- 1.2 V (VDS =
- 10 V, ID =
- 200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD...