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TPD1045F - Silicon Monolithic Power MOS

General Description

Pin No.

Input pin.

This pin is connected to a pull-down resistor internally, so that even when input wiring is open-circuited, output can never be turned on inadvertently.

Key Features

  • A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2-π-MOSⅤ) on single chip.
  • Can directly drive a power load from a CMOS or TTL logic.
  • Built-in protection circuits against overvoltage (active clamp), Over temperature (thermal shutdown), and overcurrent (switching mode).
  • Low Drain-Source ON-resistance: RDS (ON) = 100 mΩ (max) (@VIN = 5 V, ID = 2 A, Tch = 25°C).
  • 8-pin SOP package with embossed-tape pac.

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Datasheet Details

Part number TPD1045F
Manufacturer Toshiba
File Size 273.09 KB
Description Silicon Monolithic Power MOS
Datasheet download datasheet TPD1045F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD1045F Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1045F Low-Side Power Switch for Motor, Solenoid and Lamp Drive The TPD1045F is a low-side power switch. The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions. Features • A monolithic power IC with a new structure combining a control block and a vertical power MOSFET (L2-π-MOSⅤ) on single chip. • Can directly drive a power load from a CMOS or TTL logic. • Built-in protection circuits against overvoltage (active clamp), Over temperature (thermal shutdown), and overcurrent (switching mode).