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TP65H035G4WS - SuperGaN FET

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Datasheet Details

Part number	TP65H035G4WS
Manufacturer	Transphorm
File Size	1.32 MB
Description	SuperGaN FET
Datasheet	TP65H035G4WS-Transphorm.pdf

TP65H035G4WS Product details

Description

The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN) FET is a normally-off device using Transphorm’s Gen IV platform.

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Wide gate safety margin.
Transient over-voltage capability.
Enhanced inrush current capability.
Very low QRR.
Reduced crossover loss Benefits.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system size and weight.
Overall lower system cost.
Achieves increased efficiency in both har.

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Published: Aug 10, 2020 |