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TP65H035G4WS Datasheet Preview

TP65H035G4WS Datasheet

SuperGaN FET

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TP65H035G4WS
650V SuperGaN™ FET in TO-247 (source tab)
Description
The TP65H035G4WS 650V, 35 mΩ gallium nitride (GaN)
FET is a normally-off device using Transphorm’s Gen IV
platform. It combines a state-of-the-art high voltage GaN
HEMT with a low voltage silicon MOSFET to offer superior
reliability and performance.
The Gen IV SuperGaN™ platform uses advanced epi and
patented design technologies to simplify manufacturability
while improving efficiency over silicon via lower gate charge,
output capacitance, crossover loss, and reverse recovery
charge.
Related Literature
AN0009: Recommended External Circuitry for GaN FETs
AN0003: Printed Circuit Board Layout and Probing
Ordering Information
Part Number
Package
TP65H035G4WS 3 lead TO-247
TP65H035G4WS
TO-247
(top view)
S
Package
Configuration
Source
G
S
D
Features
JEDEC qualified GaN technology
Dynamic RDS(on)eff production tested
Robust design, defined by
Wide gate safety margin
Transient over-voltage capability
Enhanced inrush current capability
Very low QRR
Reduced crossover loss
Benefits
Enables AC-DC bridgeless totem-pole PFC designs
Increased power density
Reduced system size and weight
Overall lower system cost
Achieves increased efficiency in both hard- and soft-
switched circuits
Easy to drive with commonly-used gate drivers
GSD pin layout improves high speed design
Applications
Datacom
Broad industrial
PV inverter
Servo motor
Key Specifications
VDSS (V)
V(TR)DSS (V)
RDS(on)eff (mΩ) max*
650
725
41
QRR (nC) typ
150
QG (nC) typ
22
* Dynamic on-resistance; ; see Figures 18 and 19
Cascode Schematic Symbol
Apr. 28, 2020
tp65h035G4ws.1
Cascode Device Structure
© 2019 Transphorm Inc. Subject to change without notice.
1




Transphorm

TP65H035G4WS Datasheet Preview

TP65H035G4WS Datasheet

SuperGaN FET

No Preview Available !

TP65H035G4WS
Absolute Maximum Ratings (Tc=25°C unless otherwise stated.)
Symbol
Parameter
VDSS
Drain to source voltage (TJ = -55°C to 150°C)
V(TR)DSS
Transient drain to source voltage a
VGSS
Gate to source voltage
PD
Maximum power dissipation @TC=25°C
Continuous drain current @TC=25°C b
ID
Continuous drain current @TC=100°C b
IDM
Pulsed drain current (pulse width: 10µs)
TC
Operating temperature
TJ
TS
Storage temperature
Case
Junction
TSOLD
Soldering peak temperature e
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1µs
b. For increased stability at high current operation, see Circuit Implementation on page 3
c. Continuous switching operation
d. ≤300 pulses per second for a total duration 20 minutes
e. For 10 sec., 1.6mm from the case
Thermal Resistance
Symbol
Parameter
RΘJC
Junction-to-case
RΘJA
Junction-to-ambient
Limit Value
650
725
±20
156
46.5
29.5
240
-55 to +150
-55 to +150
-55 to +150
260
Typical
0.8
40
Unit
V
W
A
A
A
°C
°C
°C
°C
Unit
°C/W
°C/W
Apr. 28, 2020
tp65h035G4ws.1
transphormusa.com
2



Part Number TP65H035G4WS
Description SuperGaN FET
Maker Transphorm
Total Page 3 Pages
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