TP65H035WS Datasheet - Transphorm

650V Cascode GaN FET

TP65H035WS Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-vol

TP65H035WS General Description

The TP65H035WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower ga.

TP65H035WS Datasheet (1.18 MB)

TP65H035WS Datasheet Preview — Preview of TP65H035WS PDF

Datasheet Details

Part number:

TP65H035WS

Manufacturer:

Transphorm

File Size:

1.18 MB

Description:

650v cascode gan fet.

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TAGS

TP65H035WS 650V Cascode GaN FET Transphorm

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TP65H035WS Features

TP65H035WS General Description

Datasheet Details

File Size:

Description:

TP65H035WS Distributor