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TP65H035WSQA Datasheet 650V GaN FET

Manufacturer: Transphorm

General Description

The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Overview

TP65H035WSQA AEC-Q101 Qualified 650V GaN FET in TO-247 (source.

Key Features

  • JEDEC-qualified GaN technology.
  • Junction temperature rating of 175C.
  • Dynamic RDS(on) production tested.
  • Robu.