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TP65H035WSQA Datasheet - Transphorm

650V GaN FET

TP65H035WSQA Features

* JEDEC-qualified GaN technology

* Junction temperature rating of 175C

* Dynamic RDS(on) production tested

* Robu

TP65H035WSQA General Description

The TP65H035WSQA 650V, 35mΩ gallium nitride (GaN) FET is a normally-off automotive (AEC-Q101) qualified device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficie.

TP65H035WSQA Datasheet (945.99 KB)

Preview of TP65H035WSQA PDF

Datasheet Details

Part number:

TP65H035WSQA

Manufacturer:

Transphorm

File Size:

945.99 KB

Description:

650v gan fet.

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TP65H035WSQA 650V GaN FET Transphorm

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