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TP65H050WS Datasheet 650V GaN FET

Manufacturer: Transphorm

Datasheet Details

Part number TP65H050WS
Manufacturer Transphorm
File Size 1.19 MB
Description 650V GaN FET
Datasheet download datasheet TP65H050WS Datasheet

General Description

The TP65H050WS 650V, 50mΩ Gallium Nitride (GaN) FET is a normally-off device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Overview

TP65H050WS 650V GaN FET in TO-247 (source tab).

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-vo.