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TSA24N50MR - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 24A,500V,Max. RDS(on)=0.2 Ω @ VGS =10V.
  • Low gate charge(typical 90nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol Parameter Value VDSS VGS ID IDM EAS IAR EAR dv/dt Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recover.

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Datasheet preview – TSA24N50MR

Datasheet Details

Part number TSA24N50MR
Manufacturer Truesemi
File Size 394.92 KB
Description N-Channel MOSFET
Datasheet download datasheet TSA24N50MR Datasheet
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Full PDF Text Transcription

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TSA24N50MR TSA24N50MR 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 24A,500V,Max.RDS(on)=0.
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