TSD2N60M mosfet equivalent, n-channel mosfet.
* 1.9A,600V,Max.RDS(on)=5.00 Ω @ VGS =10V
* Low gate charge(typical 9nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/.
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t.
Image gallery
Download