TSD2N60M Datasheet - Truesemi

N-Channel MOSFET

TSD2N60M Features

* 1.9A,600V,Max.RDS(on)=5.00 Ω @ VGS =10V

* Low gate charge(typical 9nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSD2N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSD2N60M Datasheet (428.40 KB)

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Datasheet Details

Part number:

TSD2N60M

Manufacturer:

Truesemi

File Size:

428.40 KB

Description:

N-channel mosfet.

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TSD2N60M N-Channel MOSFET Truesemi

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TSD2N60M Features

TSD2N60M General Description

Datasheet Details

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