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TSD2N60MZ - N-Channel MOSFET

Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V.
  • Low gate charge ( typical 9nC).
  • High ruggedness.
  • Fast switching.
  • 100% avalanche tested.
  • ESD improved capability.
  • Improved dv/dt capability G DS D-PAK ( TO-252 ) GD S I-PAK ( TO-251 ) Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol VDSS ID IDM VGSS EAS EAR dv/dt Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Curren.

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Datasheet Details

Part number TSD2N60MZ
Manufacturer Truesemi
File Size 227.53 KB
Description N-Channel MOSFET
Datasheet download datasheet TSD2N60MZ Datasheet
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Full PDF Text Transcription

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TSD2N60MZ / TSU2N60MZ 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 1.9A, 600V, RDS(on) = 5.
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