TSF10N65M Datasheet - Truesemi

N-Channel MOSFET

TSF10N65M Features

* 10.0A,650V,Max.RDS(on)=1.0Ω @ VGS =10V

* Low gate charge(typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSF10N65M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF10N65M Datasheet (1.22 MB)

TSF10N65M Datasheet Preview — Preview of TSF10N65M PDF

Datasheet Details

Part number:

TSF10N65M

Manufacturer:

Truesemi

File Size:

1.22 MB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF10N60C 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)

TSF10N60M 600V N-Channel MOSFET (Truesemi)

TSF10N60S N-Channel MOSFET (Truesemi)

TSF10N80M N-Channel MOSFET (Truesemi)

TSF10H100C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H200C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10U60C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF110D00A-S4 Saw Filters (Token)

TAGS

TSF10N65M N-Channel MOSFET Truesemi

Image Gallery

TSF10N65M Features

TSF10N65M General Description

Datasheet Details

File Size:

Description:

TSF10N65M Distributor