TSF10N80M Datasheet - Truesemi

N-Channel MOSFET

TSF10N80M Features

* 10.0A,800V,Max.RDS(on)=1.10 Ω @ VGS =10V

* Low gate charge(typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSF10N80M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF10N80M Datasheet (309.73 KB)

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Datasheet Details

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TSF10N80M

Manufacturer:

Truesemi

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309.73 KB

Description:

N-channel mosfet.

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TSF10N80M N-Channel MOSFET Truesemi

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TSF10N80M Features

TSF10N80M General Description

Datasheet Details

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