TSF20N65S Key Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.16Ω
- Ultra Low Gate Charge (typ. Qg = 63nC)
- 100% avalanche tested
- Rohs pliant
- Part: TSF20N65S
- Manufacturer: Truesemi
- Size: 928.63 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSF20N60MR | N-Channel MOSFET |
| TSF20N60S | N-Channel MOSFET |
| TSF20N50M | N-Channel MOSFET |
| TSF22N50M | N-Channel MOSFET |
| TSF2N60M | 600V N-Channel MOSFET |
TSF20N65S Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJFET is suitable for various AC/DC power conversion inswitching...