TSI10N60M Datasheet, Truesemi

TSI10N60M mosfet equivalent, n-channel mosfet.

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Features and benefits

- 10A, 600V, RDS(on) = 0.75Ω@VGS = 10 V - Low gate charge ( typical 48nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-.

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TSI10N

TSI106G

Truesemi

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