TSP11N60S mosfet equivalent, n-channel mosfet.
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.38Ω
* Ultra Low Gate Charge (typ. Qg = 35nC)
* 100% avalanche tested
* Rohs Compliant
D2-PAK (TO-263)
Absolute.
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss,.
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