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TSP11N60S Datasheet N-Channel MOSFET

Manufacturer: Truesemi

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Datasheet Details

Part number TSP11N60S
Manufacturer Truesemi
File Size 922.39 KB
Description N-Channel MOSFET
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General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.

SJFET is suitable for various AC/DC power conversion inswitching mode operation for higher efficiency.

Overview

TSP11N60S / TSF11N60S/TSB11N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP11N60S/TSF11N60S /TSB11N60S 600V N-Channel.

Key Features

  • 650V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.38Ω.
  • Ultra Low Gate Charge (typ. Qg = 35nC).
  • 100% avalanche tested.
  • Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) TSB11N60S 11.
  • 8.5.
  • IDM Drain Current - Pulsed (Note 1) 40.
  • VGSS Gate-Source voltage EAS.

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