TSP7N60S Key Features
- 650V @TJ = 150 ℃
- Typ. RDS(on) = 0.58Ω
- Ultra Low Gate Charge (typ. Qg = 9nC)
- 100% avalanche tested
- Rohs pliant
- Part: TSP7N60S
- Manufacturer: Truesemi
- Size: 804.55 KB
Related Truesemi Datasheets
| Part Number | Description |
|---|---|
| TSP7N60M | N-Channel MOSFET |
| TSP7N65M | N-Channel MOSFET |
| TSP7N80M | N-Channel MOSFET |
| TSP70R1K1S1 | N-Channel MOSFET |
| TSP70R210S1 | N-Channel MOSFET |
TSP7N60S Description
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion inswitching...