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TSP7N80M Datasheet - Truesemi

N-Channel MOSFET

TSP7N80M Features

* - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TSP7N80M General Description

This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices .

TSP7N80M Datasheet (287.10 KB)

Preview of TSP7N80M PDF

Datasheet Details

Part number:

TSP7N80M

Manufacturer:

Truesemi

File Size:

287.10 KB

Description:

N-channel mosfet.

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TSP7N80M N-Channel MOSFET Truesemi

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