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4402 - N-Channel MOSFET

General Description

The AO4402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 2.5V) SD SD SD GD SOIC-8 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±12 12 10 80 3 2.1 -55 to 150 Thermal Characteristics Par.

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Datasheet Details

Part number 4402
Manufacturer Tuofeng Semiconductor
File Size 220.72 KB
Description N-Channel MOSFET
Datasheet download datasheet 4402 Datasheet

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4402 4402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 2.