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4409 - P-Channel MOSFET

Tuofeng Semiconductor

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Datasheet Details

Part number	4409
Manufacturer	Tuofeng Semiconductor
File Size	156.24 KB
Description	P-Channel MOSFET
Datasheet	4409-TuofengSemiconductor.pdf

4409 Product details

Features

Advanced Trench Process Technology.
High Density Cell Design for Ultra Low On-Resistance.
Lead free product is acquired.
SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage Parameter Drain Current @TA=25oC IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.3mH Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC IS Maximum Diode Forward Current.

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Published: Aug 28, 2016 |